| PART |
Description |
Maker |
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| TC58FVT800-12 TC58FVB800F TC58FVT800FT-10 TC58FVT8 |
(TC58Fxxx) 8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64BDC |
64-MBIT (8M x 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia )
64-MBIT (8M 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM (8M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT160 TC58FVB160FT-10 TC58FVB160FT TC58FVB160 |
16-MBIT (2M x 8 BITS/1M x 16 BITS) CMOS FLASH MIMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FV321 TC58FVB321FT TC58FVB321FT-10 TC58FVB321F |
(TC58FVxxx) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY
32-MBIT (4M 】 8 BITS / 2M 】 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC5816BDC |
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58128AFT |
128-MBIT (16M 】 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| 42S16400A IS42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution Inc
|
| IS45S16400C1-7TA1 IS45S16400C1-7TLA1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
| IS42VS16400C1-12T IS42VS16400C1-12TI IS42VS16400C1 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
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